IPP180N10N3 G datasheet

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О ДАТАШИТЕ

• Маркировка
  IPP180N10N3 G
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP180N10N3 G Configuration: Single Continuous Drain Current: 43 A Drain-source Breakdown Voltage: 100 V Factory Pack Quantity: 500 Fall Time: 5 ns Gate-source Breakdown Voltage: +/- 20 V Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Package / Case: TO-220 Part # Aliases: IPP180N10N3GXK IPP180N10N3GXKSA1 SP000683090 Power Dissipation: 71 W Resistance Drain-source Rds (on): 0.018 Ohms Rise Time: 12 ns Rohs: yes Transistor Polarity: N-Channel Typical Turn-off Delay Time: 19 ns RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 20 V Resistance Drain-Source RDS (on): 0.018 Ohms Typical Turn-Off Delay Time: 19 ns
• Количество страниц
  10 шт.
• Форматы файла
  HTML, PDF

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